Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

Abstract

The results of experimental investigations of mid-infrared interband photoluminescence spectra from quantum well nanostructures based on InAs/GaSb/Al0.35Ga0.65As0.03Sb0.97 type II quantum wells in the wide temperature range from 10 K to the room temperature are presented. The photoluminescence line spectral positions are compared with the effective quantum well bandgap values obtained from the results of calculations of electron and hole energy states in quantum well. Analysis of the temperature dependence of the interband emission intensity allows to assume the presence of the traps near the middle of the effective energy gap. It is found that interband radiative recombination rate and nonradiative Shockley-Read-Hall rate are comparable.