Abstract
XPS depth chemical and phase profiling of an air-oxidized niobium nitride thin film on a buffer-layer GaN is performed. It is found that an intermediate layer of Nb5N6 and NbONx under the layer of niobium oxide is generated.
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CITATION STYLE
APA
Lubenchenko, A. V., Batrakov, A. A., Krause, S., Pavolotsky, A. B., Shurkaeva, I. V., Ivanov, D. A., & Lubenchenko, O. I. (2017). XPS Depth Profiling of Air-Oxidized Nanofilms of NbN on GaN Buffer-Layers. In Journal of Physics: Conference Series (Vol. 917). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/917/9/092001
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