A comparative study regarding effects of interfacial ferroelectric Bi 4Ti3O12 (BTO) layer on electrical characteristics of Au/n-Si structures

Abstract

Present study focuses on the effects of interfacial ferroelectric BTO layer on the electrical characteristics of Au/n-Si structures, hence Au/n-Si (MS) and Au/BTO/n-Si (MFS) structures were fabricated and admittance measurements (capacitance-voltage: C-V and conductance-voltage: G/ω-V) of both structures were conducted between 10 kHz and 1MHz at room temperature. Results showed that C-V and G/ω-V characteristics were affected not only by frequency but also through deposition of BTO layer. Some effects can be listed as sharper peaks in C-V plots, higher capacitance and conductance values. Structure's series resistance (Rs) also decreased due to BTO layer. Interface states (Nss) profiles of the structures were obtained using Hill-Coleman and high-low frequency capacitance (CHF-C LF). Some of the main electrical parameters were extracted from C-2-V plots using depletion capacitance approach. Furthermore, current-voltage characteristics of MS and MFS structures were presented. © Indian Academy of Sciences.