Progress in understanding the chemical and electronic properties of metal-semiconductor interfaces has depended heavily on the use of surface science techniques. This article provides an overview of the wide range of atomic-scale chemical phenomena observed at metal-semiconductor interfaces and their relation to contact charge transfer and macroscopic Schottky barrier formation. Particular emphasis is given to this author's research contributions over the past two decades.
CITATION STYLE
HIROSE, K., & OHDOMARI, I. (1989). Metal/semiconductor interfaces. Hyomen Kagaku, 10(10), 850–855. https://doi.org/10.1380/jsssj.10.850
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