One-time programmable memory based on ZrTiOx antifuse for crossbar memory application featuring high speed operation and low power consumption

Abstract

TaN/ZrTiOxPt metal-insulator-metal structure was employed as the platform to evaluate the eligibility for antifuse one-time programmable (OTP) memory applications, and the impact of O2 plasma on device performance was also discussed. Owing to the oxygen radicals that enhance the dielectric integrity, the voltage for state switching increases with O 2 plasma treatment. Memory cells without plasma treatment demonstrate promising characteristics for OTP memory applications in terms of a low dc switching voltage of 2 V, high programming speed of 60 ns, high read endurance up to 106 reading cycles, and desirable retention time and low switching power density of 6.4 mW/cm2. The memory cell technology not only exhibits the prominent performance which is advantageous over other dielectrics reported in the literature, but it also possesses the capability to from stackable 3-D architecture. © 1980-2012 IEEE.