Abstract
We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has the potential for ultrahigh-speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.
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Park, G. C., Xue, W., Taghizadeh, A., Semenova, E., Yvind, K., Mørk, J., & Chung, I. S. (2015). Hybrid vertical-cavity laser with lateral emission into a silicon waveguide. Laser and Photonics Reviews, 9(3), L11–L15. https://doi.org/10.1002/lpor.201400418
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