Design exploration of 3D stacked non-volatile memory by conductive bridge based crossbar

Abstract

Non-volatile memory (NVM) is one recent promising solution to build the next generation of memory system. Compared to other non-volatile devices such as flash, phase-change random-access-memory (PCRAM), memristor and etc., the emerging conductive-bridge random-access-memory (CBRAM) has shown advantages in accessing speed, power and endurance. In this paper, design of 3D-stacked NVM is explored with the use of CBRAM-crossbar. Specifically, accurate performance modeling of CBRAM-crossbar structure is studied within the corresponding design platform developed at device and system levels. Experiments show that, compared to PCRAM, the proposed CBRAM-crossbar based memory achieves 10x∼100x faster accessing time, at least 100x less operation power, and 100x longer endurance. © 2011 IEEE.