Two dimensional Si layer epitaxied on LaAlO3(111) substrate: RHEED and XPS investigations

Abstract

We report the epitaxial growth of one Silicon monolayer on the LaAlO 3(111) substrate, a high-κ crystalline oxide. Structural and chemical properties were investigated in-situ using reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). The deposition was achieved by molecular beam epitaxy in the temperature range RT-500°C. A two-dimensional epitaxial growth mode is observed for a deposition at temperature between 300°C and 500°C. The deposited single layer is formed by two dimensional (2D) structures of Si. © Published under licence by IOP Publishing Ltd.