Polarization imaging of imperfect m -plane GaN surfaces

Abstract

Surface polar states in m-plane GaN wafers were studied using a laser terahertz (THz) emission microscope (LTEM). Femtosecond laser illumination excites THz waves from the surface due to photocarrier acceleration by local spontaneous polarization and/or the surface built-in electric field. The m-plane, in general, has a large number of unfavorable defects and unintentional polarization inversion created during the regrowth process. The LTEM images can visualize surface domains with different polarizations, some of which are hard to visualize with photoluminescence mapping, i.e., non-radiative defect areas. The present study demonstrates that the LTEM provides rich information about the surface polar states of GaN, which is crucial to improve the performance of GaN-based optoelectronic and power devices.