Abstract
We have studied time-integrated and time-resolved photoluminescence (PL) spectra and the transport properties of cubic GaN layers doped with different amounts of either magnesium (p-type) or silicon (n-type). In Mg doped material a broad blue peak was observed whose origin in cubic material has not been well established. Our temperature dependent and time resolved PL results as well as the observation of strong self-compensation in Mg-doped cubic GaN have allowed us to present a model for the origin of this emission in cubic material. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Powell, R. E. L., Novikov, S. V., Foxon, C. T., Akimov, A. V., & Kent, A. J. (2014). Photoluminescence of magnesium and silicon doped cubic GaN. Physica Status Solidi (C) Current Topics in Solid State Physics, 11(3–4), 385–388. https://doi.org/10.1002/pssc.201300468
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