Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors

Abstract

Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD) semiconductors with intrinsic band gaps (1-2 eV) are considered promising candidates for channel materials in next-generation transistors. Low-resistance metal contacts to mTMDs are crucial because currently they limit mTMD device performances. Hence, a comprehensive understanding of the atomistic nature of metal contacts to these 2D crystals is a fundamental challenge, which is not adequately addressed at present. In this paper, we report a systematic study of metal-mTMD contacts with different geometries (top contacts and edge contacts) by ab initio density-functional theory calculations, integrated with Mulliken population analysis and a semiempirical van der Waals dispersion potential model (which is critical for 2D materials and not well treated before). Particularly, In, Ti, Au, and Pd, contacts to monolayer MoS2 and WSe2 as well as Mo-MoS2 and W-WSe2 contacts are evaluated and categorized, based on their tunnel barriers, Schottky barriers, and orbital overlaps. Moreover, going beyond Schottky theory, new physics in such contact interfaces is revealed, such as the metallization of mTMDs and abnormal Fermi level pinning. Among the top contacts to MoS2, Ti and Mo great potential to form favorable top contacts, which are both n-type contacts, while foshowr top contacts to WSe2, W or Pd exhibits the most advantages as an n- or p-type contact, respectively. Moreover, we find that edge contacts can be highly advantageous compared to top contacts in terms of electron injection efficiency. Our formalism and the results provide guidelines that would be invaluable for designing novel 2D semiconductor devices.