Structural analysis of anodic porous alumina used for resistive random access memory

Abstract

Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two layers of an anodic porous alumina film using transmission electron microscopy and electron energy-loss spectroscopy. Diffraction patterns showed that both layers are amorphous, and the electron energy-loss spectroscopy indicated that the inner layer contains less oxygen than the outer layer. We speculate that the conduction paths are mostly located in the oxygen-depleted area. © 2010 National Institute for Materials Science.