Electrodeposition of tin selenide thin film, a high temperature thermoelectric material

Abstract

Thin films of tin selenide (SnSe) were synthesized by electrochemical process at a deposition potential of -0.6 V (Ag/AgCl reference electrode) at room temperature (27°C). X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were employed to characterize the thin films and morphology of the material and to indicate chemical composition respectively. Thermoelectric properties were measured with temperature variation. Figure of merit (ZT) has been calculated with varying temperature and ZT=1.31 has been obtained at 373 K.