Low temperature preparation of CaCu3Ti4O12 ceramics with high permittivity and low dielectric loss

Abstract

Low temperature preparation of CaCu3Ti4O12 ceramics with large permittivity is of practical interest for cofired multilayer ceramic capacitors. Although CaCu3Ti4O12 ceramics have been prepared at low temperatures as previously reported, they have rather low permittivity. This work demonstrates that CaCu3Ti4O12 ceramics can not only be prepared at low temperatures, but they also have large permittivity. Herein, CaCu3Ti4O12 ceramics were prepared by the solid state reaction method using B2O3 as the doping substance. It has been shown that B2O3 dopant can considerably lower the calcination and sintering temperatures to 870 °C and 920 °C, respectively. The relative permittivity of the low temperature prepared CaCu3Ti4−xBxO12 ceramics is about 5 times larger than the previously reported results in the literature. Furthermore, the dielectric loss of the CaCu3Ti4−xBxO12 ceramics is found to be as low as 0.03. This work provides a beneficial base for the future commercial applications of CaCu3Ti4O12 ceramics with large permittivity for the cofired multilayer ceramic capacitors.