Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure

Abstract

We investigate magnetotransport properties of thin (Ga,Mn)Sb layers in a field-effect structure. By changing the hole concentration p in the channel by applied electric fields, we establish the relationship between the Curie temperature TC and p, which shows γ of 1.3-1.6 in TC pγ. The exponent γ is several times larger than γ ∼ 0.2 reported previously for (Ga,Mn)As. Analyses based on the p-d Zener model taking into account of non-uniform hole distribution in the channel shows that the lager γ is explained by the presence of hole accumulation at the interface of (Ga,Mn)Sb and the gate insulator. © 2013 AIP Publishing LLC.