Multi-type quantum dots photo-induced doping enhanced graphene/semiconductor solar cell

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Abstract

A viable approach to enhance the photovoltaic performance of graphene (Gr)/semiconductor solar cells has been demonstrated. In order to take full advantage of the solar energy in the range of visible and ultraviolet light, InP and ZnO quantum dots (QDs) with band gaps of 2.4 eV and 3.3 eV, respectively, are simultaneously introduced to dope Gr by a photo-induced doping mechanism. Raman and photoluminescence measurements indicate that the photo-induced holes diffuse into Gr, leading to p-doping of Gr. As a result, the power conversion efficiency (PCE) of the Gr/GaAs heterostructure solar cell with good stability can be improved from 8.57% to 11.50%. Although this process is simple and feasible, we emphasize that the mixed semiconductor QDs enhanced Gr/semiconductor heterostructure solar cell is similar to the band gap engineering of traditional multi-junction bulk semiconductor solar cells.

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Wu, J., Feng, S., Wu, Z., Lu, Y., & Lin, S. (2017). Multi-type quantum dots photo-induced doping enhanced graphene/semiconductor solar cell. RSC Advances, 7(53), 33413–33418. https://doi.org/10.1039/c7ra05646j

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