Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substrates

Abstract

In this study, the ion implantation of silicon (100) substrates with 28Si+ ions is characterised using spectroscopic ellipsometry (SE), modulated optical reflectance (MOR) and Rutherford backscattering spectroscopy (RBS). Samples were implanted with ion energies of 2 MeV, 1 MeV and 200 keV to create a series of deep-level and surface-damaged layers. The implantation dose was varied from 3.4 × 1014 ions cm-2 to 1.5 × 1016 ions cm-2. All ion implantations were performed at room temperature. It was observed that the amplitudes and positions of the E1 and E2 silicon peaks are sensitive indicators of the degree of crystallinity of the silicon substrate. Monitoring of these parameters may provide a rapid route for water mapping of ion-implantation uniformity. The SE oscillations observed below 2.3 eV reflect the depth of the ion-implanted damage layer. In addition, analysis of the complete spectroscopic data yields damage profiles consistent with both measured and calculated RBS and TRIM ion-implantation moments. © 1993.