1/f noise in metal-oxide-semiconductor transistors biased in weak inversion

Abstract

An approach to model 1/f noise in the weak inversion range of metal-oxide-semiconductor transistors (MOST) is proposed, based on Hooge's theory (mobility fluctuation model). Starting from conduction equations in the subthreshold regime, a method to evaluate the total number of carriers under the gate is presented and allows us to deduce the Hooge parameter αH. This model is applied to p-channel MOSTs. With the proposed model, the value of αH obtained in weak inversion is quite similar to this extracted in strong inversion allowing a unique description of the 1/f noise. © 2001 American Institute of Physics.