Abstract
We propose a new class of non-uniform superlattice magnetic tunnel junctions (Nu-SLTJs) with the linear, Gaussian, Lorentzian, and Pöschl-Teller width and height based profiles manifesting a sizable enhancement in the TMR (≈104 − 106%) with a significant suppression in the switching bias (≈9 folds) owing to the physics of broad-band spin filtering. By exploring the negative differential resistance region in the current-voltage characteristics of the various Nu-SLTJs, we predict the Nu-SLTJs offer fastest spin transfer torque switching in the order of a few hundred picoseconds. We self-consistently employ the atomistic non-equilibrium Green’s function formalism coupled with the Landau-Lifshitz-Gilbert-Slonczewski equation to evaluate the device performance of the various Nu-SLTJs. We also present the design of minimal three-barrier Nu-SLTJs having significant TMR (≈104%) and large spin current for the ease of device fabrication. We hope that the class of Nu-SLTJs proposed in this work may lay the bedrock to embark on the exhilarating voyage of exploring various non-uniform superlattices for the next generation of spintronic devices.
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Chakraborti, S., & Sharma, A. (2023). Non-uniform superlattice magnetic tunnel junctions. Nanotechnology, 34(18). https://doi.org/10.1088/1361-6528/acb69b
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