Journal Article

Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN

  • Fujii K
  • Ono M
  • Iwaki Y
  • et al.
The Journal of Physical Chemistry C (2010) 114(51) 22727-22735
DOI: 10.1021/jp104403s
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Abstract

... to chemical energy conversion efficiency.(1-3) In water splitting by photoelectrochemical reaction, for ... Thus, an important area for research on photoelectrochemistry is to find new compound ... Despite the band-edge energies, the semiconductor properties like crystal qualities and ...

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Fujii, K., Ono, M., Iwaki, Y., Sato, K., Ohkawa, K., & Yao, T. (2010). Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN. The Journal of Physical Chemistry C, 114(51), 22727–22735. https://doi.org/10.1021/jp104403s

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