Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations

Abstract

We study the dynamical Coulomb interaction under the junctionless transistor (JLT) structures, in which high doping concentration is inevitable to obtain good device performance, by employing the self-consistent Monte Carlo simulations. The power spectra of potential fluctuations in the source and drain regions show clear peaks corresponding to the plasma frequencies in those regions. This observation justifies the accuracy of the present simulations. The dynamical Coulomb interaction degrades the drain current and, thus, is inevitable to predict accurate device performance of JLTs.