Screening of metal flux for SiC solution growth by a thin-film combinatorial method

Abstract

Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents Atsushi Horio, Shunta Harada, Daiki Koike et al.-Structural and electrical characterization of ohmic contacts to graphitized siliconcarbide Mohammad H Maneshian, Ming-Te Lin, David Diercks et al.-Recent citations Platinum additive impacts on vapor-liquid-solid growth chemical interface for high-quality SiC single crystal films A. Osumi et al-Effect of cobalt addition to Si-Cr solvent in top-seeded solution growth Koangyong Hyun et al-Effect of Al addition to Si-Ni flux on pulsed laser deposition of SiC thin films Aomi ONUMA et al-This content was downloaded from IP address 124.241.179.51 on 10/06 Abstract 4H-SiC is a wide-bandgap semiconductor with potential applications in power devices. The lack of a liquid phase in SiC hinders conventional crystal growth from the melt; consequently, SiC wafers still have low quality and are nearly 100 times more expensive than Si wafers. To take advantage of the solution growth for improving the quality and reducing the cost of SiC, Ni addition to Si-Ti flux has been investigated. A combinatorial approach was employed to accelerate the screening of metal flux for the SiC solution growth.