Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells

Abstract

We demonstrate room-temperature stimulated emission at 568 nm from low dislocation density InGaN/GaN multi-quantum wells. For a 1.4 mm long and a 50 μm wide ridge bar optically pumped by a high-power pulsed laser, we observed an emission peak at 568 nm with a narrow spectral width of less than 2 nm at room temperature. The measured pumping threshold is less than 1.5 MW/cm2, and the polarization ratio of the emission is over 90%. This demonstration paves the way for the future development of electrically injected InGaN semiconductor yellow laser diodes.