Abstract
In this work, we invented the Φ memristor to exhibit the direct flux-charge interaction, in which a wire carrying a controlled amount of current is strung through a magnetic core, and, simultaneously, sensing the possibly induced voltage by the switched flux. This work confirms the existence of the ideal memristor postulated almost 50 years ago. In order to study this and its positive/negative integer-/fraction-order counterparties, the flux-charge relationship (and its approximations), the complete differential conformal transformation, and the complete triangular periodic table of elementary circuit elements are developed. The ideal Φ memristor, fractional memristor, mem-inductor/mem-capacitor, and negative memristor are predicted within the context of this new 3-in-1 memristor physics, and their new synaptic functionalities for a brain-like computer are studied experimentally.
Cite
CITATION STYLE
Wang, F. Z., Li, L., Shi, L., Wu, H., & Chua, L. O. (2019, February 7). Φ memristor: Real memristor found. Journal of Applied Physics. American Institute of Physics. https://doi.org/10.1063/1.5042281
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