Standard CMOS fabrication of a sensitive fully depleted electrolyte-insulator-semiconductor field effect transistor for biosensor applications

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Abstract

Microfabricated semiconductor devices are becoming increasingly relevant for detection of biological and chemical components. The integration of active biological materials together with sensitive transducers offers the possibility of generating highly sensitive, specific, selective and reliable biosensors. This paper presents the fabrication of a sensitive, fully depleted (FD), electrolyte-insulator-semiconductor field-effect transistor (EISFET) made with a silicon-on-insulator (SOI) wafer of a thin 10-30 nm active SOI layer. Initial results are presented for device operation in solutions and for bio-sensing. Here we report the first step towards a high volume manufacturing of a CMOS-based biosensor that will enable various types of applications including medical and enviro nmental sensing. © 2009 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.

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Shalev, G., Cohen, A., Doron, A., Machauf, A., Horesh, M., Virobnik, U., … Levy, I. (2009). Standard CMOS fabrication of a sensitive fully depleted electrolyte-insulator-semiconductor field effect transistor for biosensor applications. Sensors, 9(6), 4366–4379. https://doi.org/10.3390/s90604366

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