Minority Carrier Diffusion Coefficient D *( B,T): Study in Temperature on a Silicon Solar Cell under Magnetic Field

Abstract

This work deals with minority carrier diffusion coefficient study in silicon so-lar cell, under both temperature and applied magnetic field. New expressions of diffusion coefficient are pointed out, which gives attention to thermal be-havior of minority carrier that is better understood with Umklapp process. This study allowed to determine an optimum temperature which led to max-imum diffusion coefficient value while magnetic field remained constant.