Abstract
Optical transitions in silicon nanocrystals with different surface passivations were probed at low temperatures on a single-particle level. A type of quasidirect recombination process, different from the quantum-confined exciton transition, is identified. The luminescence spectra have different emission energies, but the contribution of a no-phonon transition is significantly higher than expected from the quantum-confinement model. Its relative strength was found to be temperature dependent, suggesting spatial localization of excitons as a possible origin. © 2011 American Physical Society.
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CITATION STYLE
Sychugov, I., Valenta, J., Mitsuishi, K., Fujii, M., & Linnros, J. (2011). Photoluminescence measurements of zero-phonon optical transitions in silicon nanocrystals. Physical Review B - Condensed Matter and Materials Physics, 84(12). https://doi.org/10.1103/PhysRevB.84.125326
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