Modification of thin films induced by slow heavy ions analysed with PIXE and SRIM

Abstract

In the present work the particle induced X-rays (PIXE) emitted during interaction of inert and active slow heavy (HI) ions with specially prepared thin films were measured. Kinematics of the interaction was simulated numerically with SRIM in grazing incident-exit angle geometry and in time sequence in order to determine dynamics of formation of the subsurface region damaged through implantation, sputtering and interface mixing. It was shown that the structure and composition of films and surfaces are not stable against HI irradiation due to preferential sputtering and implantation of ions and recoils and that dynamics of such a modification can be in-situ monitored with PIXE and analyzed with SRIM.