Purcell effect in GaN-based waveguiding structures

Abstract

We provide an analysis of Purcell coefficient dependence on frequency, wavevector and emitter position in nitride-based waveguide structures. Was shown that spontaneous emission of emitter placed in one-dimensional slab waveguide structure could lead to a modification of spontaneous emission rate in the both considered structures. Results for symmetric and asymmetric nitride-based waveguides in TE polarization case was demonstrated.