Magic electron affection in preparation process of silicon nanocrystal

Abstract

It is very interesting that magic electron affection promotes growth of nanocrystals due to nanoscale characteristics of electronic de Broglie wave which produces resonance to transfer energy to atoms. In our experiment, it was observed that silicon nanocrystals rapidly grow with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition (PLD), and silicon nanocrystals almost occur in sphere shape on smaller nanocrystals with less irradiation time of electron beam. In the process, it was investigated that condensed structures of silicon nanocrystals are changed with different impurity atoms in silicon film, in which localized states emission was observed. Through electron beam irradiation for 15min on amorphous Si film doped with oxygen impurity atoms by PLD process, enhanced photoluminescence emission peaks are observed in visible light. And electroluminescence emission is manipulated into the optical communication window on the bigger Si-Yb-Er nanocrystals after irradiation of electron beam for 30min.