Texture of GaAs Nanoparticles Deposited by Pulsed Laser Ablation in Different Atmospheres

Abstract

This work analyzes the effect of nanosecond laser pulse deposition of GaAs in an inert atmosphere of Ar and He. The number of pulses and the gas pressure were varied and the effect on the nanoparticles formation was studied by scanning electron microscopy, grazing incidence small angle X-ray scattering, and atomic force microscopy. It is shown that the GaAs nanoparticle sizes and size distributions can be controlled partly by the number of laser pulses applied during their production and partly by the choice of inert gas and its pressure. Our results suggest that He is a more promising working gas producing narrower size distributions and a better size control of the grown nanoparticles.