Investigations on Bi Doped Cu2Se Prepared by Solid State Reaction Technique for Thermoelectric Applications

Abstract

The influence of Bi doping on the structural and thermoelectric properties of Cu2Se is presented in this work. Cu2−xBixSe (x = 0.00, 0.004, 0.008, 0.012) samples were prepared using conventional solid-state reaction techniques. According to room temperature XRD results, Cu2−xBixSe samples have a monoclinic crystal structure. Doping Bi to the Cu site acts as a donor, lowering the hole concentration, except for the sample with x = 0.004. The resistivity of the Cu2−xBixSe sample increases with an increase in Bi content. Seebeck coefficient data confirm that the holes are the charge carriers in Cu2−xBixSe samples. At 700 K, the Cu1.988Bi0.012Se sample has the highest power factor of 1474 μWm−1K−2, showing great potential in developing high-performance Cu2Se based thermoelectric materials.