A Review of Interface Engineering in Antimony Chalcogenide Thin Film Solar Cells

Abstract

Antimony chalcogenides (Sb2X3, where X = S, Se, or SxSe1−x) are promising materials for thin-film solar cells due to their tunable bandgaps (1.1–1.8 eV), high absorption coefficients (>105 cm−1), nontoxicity, and earth-abundant composition. Recent advancements have achieved power conversion efficiencies (PCEs) exceeding 10%, with a record of 10.81% for Sb2(S, Se)3 cells. However, interface-related issues, such as recombination losses and open-circuit voltage (VOC) deficits, limit performance. Interface engineering strategies have significantly improved device efficiency and stability, including buffer layer optimization, defect passivation, surface treatments, post-processing, and doping. This review summarizes the latest developments in these areas, discusses ongoing challenges, and proposes future research directions to enhance the performance of antimony chalcogenide solar cells.