Electric field modulation of spin transport

Abstract

The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work, we show that this feature can instead be exploited to realize a scheme where spin transport is modulated at room temperature by a modest electric field. A field directed antiparallel (parallel) to the spin-diffusion velocity can, in fact, largely increase (decrease) the spin-transport length compared with the zero field case. We find that applying an electric field E = 24 V/cm along a 40 μm-long path in germanium results in about one order of magnitude modulation of the spin-polarized electrons entering into the detector. This work demonstrates that electric fields can be exploited for guiding spins over macroscopic distances and for realizing fast room temperature modulation of spin accumulation.