Characteristics of GaN Nanowires Produced Using VLS Method on the Growth Temperatures

Abstract

One-dimensional GaN NWs (nanowires) were grown by the VLS (Vapor-liquid-solid) method using MOCVD (Metal organic chemical vapor deposition) equipment on growth temperatures in order to evaluate its characteristics. The growth temperatures ranged from 650¢J to 800¢J at an interval of 50¢J. GaN NWs grown at a temperature of 700¢J was approx. 5 μm in length and 200 nm in a diameter, showing relatively uniform size and highly density. The X-ray diffraction analysis showed that NWs grew as wurtzite GaN. In PL (photoluminescence) the spectrum measured at 4 K, at 3.47 eV, BE (band-edge) emissions were identified and the YL (yellow luminescence) was almost not shown. As a temperature dependant PL, the band structure of n-type GaN NWs was identified and E(0) values of FX and DX were calculated using Varshni's equation of 3.476 eV and 3.470 eV, respectively. The result of calculation by quenching equation showed that the activation energy value of FX was 12.8 meV and the activation energy value of DX was 19.1 meV.