High-detectivity perovskite-based photodetector using a Zr-doped TiO: X cathode interlayer

Abstract

We investigated the incorporation of Zr into TiOx cathode interlayers used as hole-blocking layers in an organometallic halide perovskite-based photodetector. The device configuration is ITO/PEDOT:PSS/CH3NH3PbIxCl3-x/PC60BM/Zr-TiOx/Al. The use of Zr-TiOx in the perovskite photodetector reduces the leakage current and improves carrier extraction. The performance of the perovskite photodetector was confirmed by analyzing the current-voltage characteristics, impedance behaviors, and dynamic characteristics. The device with a Zr-TiOx layer has a high specific detectivity of 1.37 × 1013 Jones and a bandwidth of 2.1 MHz at a relatively low reverse bias and light intensity. Therefore, it can be effectively applied to devices such as image and optical sensors.