Abstract
The first power results of GaN MESFET achieved at 2 GHz are presented. A power density of 2.2 W/mm has been obtained with an associated power-added efficiency of 27% at Vds = 30 V and Vgs = —2 V. These results represent a significant improvement over similar MESFET's or HFET’s grown on GaAs or InP substrates. © 2000, IEEE
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APA
Gaquiere, C., Trassaert, S., Boudart, B., & Crosnier, Y. (2000). High-Power GaN MESFET on Sapphire Substrate. IEEE Microwave and Guided Wave Letters, 10(1), 19–20. https://doi.org/10.1109/75.842074
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