Determination of strain-induced valence-band splitting in GaAsN thin films from circularly polarized photoluminescence

Abstract

The paper studies the circularly polarized photoluminescence (PL) from dilute GaAsN alloys with nitrogen content of 1%-3.4%, grown on GaAs substrates. The room-temperature PL is found to consist of two bands whose splitting grows with increasing nitrogen content. The analysis of the PL circular polarization has shown that the PL bands originate from the splitting of light- and heavy-hole subbands, induced by an elastic strain in GaAsN layer. The dependence of the energy gap of unstrained GaAsN on the nitrogen content has been calculated using the measured light- and heavy-hole splittings. © 2005 American Institute of Physics.