Ion implanted piezoresistive cantilever design and performance

Abstract

We present design guidelines for ion implanted piezoresistive cantilevers. Most analytical models assume cantilevers have uniform doping profiles, whereas ion implanted piezoresistors with graded doping profiles are commonly fabricated in commercial force and pressure sensors. To address this issue, we modified existing models to predict the performance of ion implanted piezoresistors. Experiment, simulation, and our analytical model of force sensitivity and force resolution agree with less than 20% error. Using the analytical model, we also demonstrate a method to choose design and operating parameters to optimize performance.