Ta-Zr-N thin films fabricated through HIPIMS/RFMS Co-sputtering

Abstract

Ta-Zr-N thin films were fabricated through co-deposition of radio-frequency magnetron sputtering and high-power impulse magnetron sputtering (HIPIMS/RFMS co-sputtering). The oxidation resistance of the fabricated films was evaluated by annealing the samples in a 15-ppm O 2 -N 2 atmosphere at 600 °C for 4 and 8 h. The mechanical properties and surface roughness of the as-deposited and annealed thin films were evaluated. The results indicated that the HIPIMS/RFMS co-sputtered Ta-Zr-N thin films exhibited superior mechanical properties and lower surface roughness than did the conventional direct current-sputtered Ta-Zr-N thin films and HIPIMS-fabricated ZrN x thin films in both the as-deposited and annealed states.