Sensitivity analysis of Horizontal pocket N-TFET based biosensor considering repulsive steric effects

Abstract

In this paper, sensitivity analysis of Tunnel Field Effect Transistor (TFET) based label free Biosensor has been countered considering the repulsive steric effect (RSE). Horizontal pocket based NTFET reference structure is being considered during ideal hindrance effect. Furthermore, the impact of RSE is considered to extract the capacitance, Drain current (ID), Energy Band Diagram, Surface Potential (ϕ), ION/IOFF ratio, tunneling rate, and ON current sensitivity (SION) for this biosensor. Moreover, sensitivity is being also measured by changing the position of the biomolecule with respect to source-channel interface. Later, noise assessment parameters like third order intercept point (IIP3), third order intermodulation point (IMD3), and low frequency analysis is observed to calculate the effect of noise during the hindrance effect. On Considering RSE effects, streptavidin biomolecules report an error in capacitance and surface potential are 39.60% and 12.3%, respectively. Finally, an error evaluation table is presented by considering the repulsive effects during the simulation. Therefore, the hindrance effect need to be considered for making the analysis label free and practical.