Organic bistable switching memory devices with MeHPPV and graphene oxide composite

Abstract

We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (105 cycles without degradation) and long retention time (5 � 1033s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.