High-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide

Abstract

A high-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide (GO) is presented. Compared with typical CMOS integrated temperature sensors, the sensitivity of this bulk silicon interdigital capacitive temperature sensor was improved significantly by using GO as sensing material, and this temperature sensor can operate in the range of - 70 to 40°C. © The Institution of Engineering and Technology 2013.