Advances in optoelectronic applications of antimony chalcogenide thin films

Abstract

Antimony selenide (Sb2Se3) is an emerging semiconductor material with significant potential for a range of photoelectric applications due to its favorable physical properties, including high stability, non-toxicity, an optimal bandgap, and high absorption coefficient. This review focuses on the latest advancements in the fabrication, material properties, and diverse applications of Sb2Se3, extending beyond photovoltaic uses to photodetectors, photocathodes, and other optoelectronic devices. The unique one-dimensional crystal structure of Sb2Se3 offers intrinsic anisotropic charge transport, making it highly adaptable for next-generation devices. We highlight the various deposition methods employed, such as hydrothermal, chemical bath deposition (CBD), vapor transport deposition (VTD), and close-spaced sublimation (CSS), each playing a crucial role in optimizing material quality. Additionally, this review discusses the primary challenges, including defect engineering and interface optimization, that must be addressed to fully realize the potential of Sb2Se3-based devices. Finally, this review presents some future directions for enhancing device performance, with particular emphasis on material synthesis and device architecture improvements that can drive further innovation in this field.