Factor affecting the performance of perovskite solar cell for distinct MAPI layer thickness

Abstract

From an extensive study, we proposed a perovskite solar cell device structure (ITO/ZnO/CH3NH3PbI3/C60/Au) to demonstrate the carrier transport and optical characterization using a commercially available software package. We used a distinct thickness of CH3NH3PbI3 active layer for the bandgap of 1.65 eV which delivers a power conversion efficiency (PCE) of 14.37% and external quantum efficiency about 82% respectively. Amongst the different thicknesses of perovskite layer, the 250 nm thick perovskite layer offers the highest open-circuit voltage of 0.807V, short-circuit current density (9.28mA/cm2), and fill factor about 0.7677. It accounts for quite remarkable significant improvement depicted in absorbance profile, mainly 86% for 250 nm thickness of the perovskite MAPI layer. Simultaneously, an average of 94% observed in the absorbance profile in sweeping angle cases from 0 to 85 degrees.