Abstract
A significant improvement (220%) is reported in the low voltage (2000 V) aging characteristics under cathodoiuminescence (CL) excitation for ZnS phosphors coated with 1.0 wt % SiO 2 by the sol-gel technique. The formation of nanoscale uniform coating was confirmed by structural analysis. An improvement in chemical and thermal stability was also confirmed by chemical etching and heat-treatment of the SiO 2 -coated phosphors. Also, the CL aging study showed a much improved CL efficiency curve for the SiO 2 -coated ZnS phosphors. The Auger electron spectroscopy study showed that the SiO 2 -coated phosphors were far more resistant to the loss of S species and to the formation of oxide dead layer. The structural, chemical, and CL characterizations demonstrated that the thin and uniform SiO 2 layers on ZnS phosphors served as protective layers retarding the surface-related degradation, which is critically important for the development of commercial field emission displays. © 2001 The Electrochemical Society. All rights reserved.
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CITATION STYLE
Do, Y. R., Park, D. H., Yang, H. G., Park, W., Wagner, B. K., Yasuda, K., & Summers, C. J. (2001). Uniform Nanoscale SiO[sub 2] Encapsulation of ZnS Phosphors for Improved Aging Properties under Low Voltage Electron Beam Excitation. Journal of The Electrochemical Society, 148(10), G548. https://doi.org/10.1149/1.1397775
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