Abrikosov vortex memory

Abstract

A nondestructive readout random access memory (RAM) cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30×60 μm 2 with a 5-μm design rule. Proper memory cell operation is achieved in the so-called 1, -1 mode using the shift saturation effect, which occurs on the shift value characteristics of the sense gate threshold curves as a function of the write currents. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.