Abstract
We investigate the thermal conductivity of ultrathin tetrahedral amorphous carbon (ta-C) films on silicon, down to subnanometer thickness. For films with an initial s p3 content of 60%, the thermal conductivity reduces from 1.42 to 0.09 WmK near room temperature as the thickness decreases from 18.5 to ∼1 nm. The variation in ta-C film thickness is accompanied by changes in Young's modulus, density, and s p3 content. The thermal resistance of the finite-thickness interface layer, which forms between ta-C and silicon, is ∼ 10-8 m2 KW near room temperature, thus producing a noticeable effect on thermal transport in ultrathin ta-C films. © 2008 American Institute of Physics.
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CITATION STYLE
Balandin, A. A., Shamsa, M., Liu, W. L., Casiraghi, C., & Ferrari, A. C. (2008). Thermal conductivity of ultrathin tetrahedral amorphous carbon films. Applied Physics Letters, 93(4). https://doi.org/10.1063/1.2957041
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