Scaled T-Gate β-Ga2O3MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

Abstract

We demonstrate a passivated MESFET fabricated on (010) Si-doped β -Ga2O3 with breakdown over 2.4 kV without field plates, high Power Figure of Merit (PFOM), and high estimated Huang's Material Figure of Merit (HMFOM), owing to low gate charge and high breakdown. MESFETs with 13 μm source-drain spacing and 75 nm channel exhibited a current density of 61 mA/mm, peak transconductance of 27 mS/mm, and on-resistance of 133 Ω mm. The device showed a PFOM competitive with state-of-the-art β -Ga2O3 devices and a record high estimated HMFOM for a β -Ga2O3 device, competitive with commercial wide-band gap devices. This demonstrates high-performance β -Ga2O3 devices as viable multi-kV high-voltage power switches.