ZnO:In films with different concentrations (0-5 at.%) are successfully synthesized on quartz substrates using sol-gel technique. The structure, morphology, and optical properties of ZnO:In films are investigated by X-ray diffraction, atomic force microscopy, and UV-visible spectrophotometer. It is found that all the films with columnar structural morphology grow along the preferred [001] orientation and the incorporation of indium can improve the crystallinity of ZnO films. The transmittance of the films is about 80% in the visible range. A change of the optical absorption edge from blue shift to red shift is observed for ZnO:In films as the doping concentration increases, which means that the optical band gap first increases and then decreases. The blue shift is due to the Burstein-Moss effect. The sharp jump of the absorption edge from blue-shift to red shift is ascribe to the band gap narrowing caused by the merging of the donor and conduction bands of ZnO:In at high doping concentration. © 2013 Guomei Tang et al.
CITATION STYLE
Tang, G., Liu, H., & Zhang, W. (2013). The variation of optical band gap for ZnO:In films prepared by sol-gel technique. Advances in Materials Science and Engineering, 2013. https://doi.org/10.1155/2013/348601
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